650V GaN FET resides in surface-mount package deal


Extending Transphorm’s SuperGaN FET portfolio to greater energy methods, the TP65H050G4BS is a 650-V, 50-mΩ gadget housed in a TO-263 (D2PAK) package deal. Engineers can use the TP65H050G4BS the place greater energy and surface-mount packaging are required, enabling higher thermal efficiency than PQFN kind packages. It additionally will increase the effectivity of PCB meeting by way of using a single manufacturing move.

The JEDEC-qualified half is meant for high-power (single to multi-kilowatt) methods usually utilized in datacenter and industrial purposes. Based mostly on the corporate’s Gen IV SuperGaN know-how, the TP65H050G4BS delivers gate robustness of ±20 V most and noise immunity of 4 V. Complete gate cost is 16 nC typical and reverse restoration cost is 120 nC typical.

The TP65H050G4BS within the D2PAK will be bought by way of distributors Digi-Key and Mouser. Additionally it is offered on a vertical daughter card to extend the facility density of Transphorm’s TDTTP2500B066-KIT, a 2.5-kW AC/DC bridgeless totem pole PFC analysis board.

TP65H050G4BS product web page

Transphorm

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